Electro-optical circuits based on light-sensing ambipolar organic field-effect transistors

Published versio

Oxygen induced p-doping of alpha-nickel phthalocyanine vacuum sublimed films: Implication for its use in organic photovoltaics

Published versio

Energy quantization in solution-processed layers of indium oxide and their application in resonant tunneling diodes

\u3cp\u3eThe formation of quantized energy states in ultrathin layers of indium oxide (In\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e3\u3c/sub\u3e) grown via spin coating and thermally annealed at 200°C in air is studied. Optical absorption measurements reveal a characteristic widening of the optical band gap with reducing In\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e3\u3c/sub\u3e layer thickness from ≈43 to ≈3 nm in agreement with theoretical predictions for an infinite quantum well. Through sequential deposition of In\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e3\u3c/sub\u3e and gallium oxide (Ga\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e3\u3c/sub\u3e) layers, superlattice-like structures with controlled dimensionality and spatially varying conduction band characteristics are demonstrated. This simple method is then explored for the fabrication of functional double-barrier resonant tunneling diodes. Nanoscale current mapping analysis using conductive atomic force microscopy reveals that resonant tunneling is not uniform but localized in specific regions of the apparent device area. The latter observation is attributed to variation in the layer(s) thickness of the In\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e3\u3c/sub\u3e quantum well and/or the Ga\u3csub\u3e2\u3c/sub\u3eO\u3csub\u3e3\u3c/sub\u3e barrier layers. Despite the nonidealities, the tremendous potential of solution-processable oxide semiconductors for the development of quantum effect devices that have so far been demonstrated only via sophisticated growth techniques is demonstrated.\u3c/p\u3

Study of the Hole Transport Processes in Solution-Processed Layers of the Wide Bandgap Semiconductor Copper(I) Thiocyanate (CuSCN)

Wide bandgap hole-transporting semiconductor copper(I) thiocyanate (CuSCN) has recently shown promise both as a transparent p-type channel material for thin-film transistors and as a hole-transporting layer in organic light-emitting diodes and organic photovoltaics. Herein, the hole-transport properties of solution-processed CuSCN layers are investigated. Metal-insulator-semiconductor capacitors are employed to determine key material parameters including: dielectric constant [5.1 (±1.0)], flat-band voltage [-0.7 (±0.1) V], and unintentional hole doping concentration [7.2 (±1.4) × 1017 cm-3]. The density of localized hole states in the mobility gap is analyzed using electrical field-effect measurements; the distribution can be approximated invoking an exponential function with a characteristic energy of 42.4 (±0.1) meV. Further investigation using temperature-dependent mobility measurements in the range 78-318 K reveals the existence of three transport regimes. The first two regimes observed at high (303-228 K) and intermediate (228-123 K) temperatures are described with multiple trapping and release and variable range hopping processes, respectively. The third regime observed at low temperatures (123-78 K) exhibits weak temperature dependence and is attributed to a field-assisted hopping process. The transitions between the mechanisms are discussed based on the temperature dependence of the transport energy. The wide bandgap p-type semiconductor copper(I) thiocyanate (CuSCN) has the potential to replace conventional hole-transport materials in numerous opto/electronics applications. This work provides a comprehensive analysis of the charge transport properties of solution-processed CuSCN layers. Various techniques are employed to evaluate the dielectric constant, flat-band voltage, unintentional doping concentration, density of states in the mobility gap, and hole-transport mechanisms.Department of Applied PhysicsMaterials Research Centr

Enabling thin-film transistor technologies and the device metrics that matter

The field-effect transistor kickstarted the digital revolution that propelled our society into the information age. One member of the now large family of field-effect devices is the thin-film transistor (TFT), best known for its enabling role in modern flat-panel displays. TFTs can be used in all sorts of innovative applications because of the broad variety of materials they can be made from, which give them diverse electrical and mechanical characteristics. To successfully utilize TFT technologies in a variety of rapidly emerging applications, such as flexible, stretchable and transparent large-area microelectronics, there are a number of metrics that matter

p-channel thin-film transistors based on spray-coated Cu2O films

Thin films of cuprous oxide (Cu2O) were grown using solution-based spray pyrolysis in ambient air and incorporated into hole-transporting thin-film transistors. The phase of the oxide was confirmed by X-ray diffraction measurements while the optical band gap of the films was determined to be ∼2.57 eV from optical transmission measurements. Electrical characterization of Cu2O films was performed using bottom-gate, bottom-contact transistors based on SiO2 gate dielectric and gold source-drain electrodes. As-prepared devices show clear p-channel operation with field-effect hole mobilities in the range of 10−4–10−3 cm2 V−1 s−1 with some devices exhibiting values close to 1 × 10−2 cm2 V−1 s−1